Selective area growth of GaN nanowires on Si(1 1 1) substrate with Ti masks by molecular beam epitaxy
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DOI: 10.1016/j.jcrysgro.2019.125181
Abstract: Abstract We present results on the selective area growth (SAG) of Gallium Nitride (GaN) nanowires on Si substrate without any buffer layer by radio frequency plasma-assisted molecular beam epitaxy. Full selectivity was achieved with a… read more here.
Keywords: growth; gan nanowires; molecular beam; nanowires substrate ... See more keywords