Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms.
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DOI: 10.1002/smll.201603775
Abstract: The effects of the growth parameters on the uniformity and the aspect ratio of InN nanowires grown on Si(111) substrates have been studied systematically, and a modified quasi-equilibrium model is proposed. The growth temperature is… read more here.
Keywords: growth inn; inn nanowires; nanowires uniform; growth ... See more keywords