Electrode-induced polarity conversion in Nb2O5/NbOx resistive switching devices
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DOI: 10.1063/5.0020501
Abstract: Applications in neuromorphic computing and next-generation memories require a deep understanding of the physical mechanisms in resistive switching (RS) devices. Here, we report electrode-induced polarity conversion in Nb2O5/NbOx RS devices, where Nb2O5 and NbOx are… read more here.
Keywords: polarity conversion; resistive switching; switching devices; nb2o5 nbox ... See more keywords