Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy
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DOI: 10.1134/s1064226919030197
Abstract: The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first time in a wide range of frequencies and temperatures.… read more here.
Keywords: insulator semiconductor; hgcdte nbn; metal insulator; systems based ... See more keywords