Electroforming-free threshold switching of NbOx–based selector devices by controlling conducting phases in the NbOx layer for the application to crossbar array architectures
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DOI: 10.1039/d2ra02930h
Abstract: Bipolar threshold switching characteristics, featuring volatile transition between the high-resistance state (HRS) at lower voltage than threshold voltage (Vth) and the low-resistance state (LRS) at higher voltage irrespective of the voltage polarity, are investigated in… read more here.
Keywords: conducting phases; electroforming free; free threshold; nbox layer ... See more keywords