Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy
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DOI: 10.1063/5.0052596
Abstract: Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact behavior. In… read more here.
Keywords: barrier height; zno nbse2; nbse2 heterostructures; zno ... See more keywords