Kinetic modeling of near-interface defect segregation during thermal annealing of oxygen-conducting solid electrolytes
Sign Up to like & getrecommendations! Published in 2017 at "Solid State Ionics"
DOI: 10.1016/j.ssi.2016.08.008
Abstract: Abstract Solid electrolytes are widely employed in devices for energy storage and conversion. Extended defects (grain boundaries, surfaces and dislocations) can generate substantial resistance to ionic transport due to defect segregation. When synthesized through solid… read more here.
Keywords: defect segregation; solid electrolytes; thermal annealing; near interface ... See more keywords
Quantified density of performance-degrading near-interface traps in SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2022 at "Scientific Reports"
DOI: 10.1038/s41598-022-08014-5
Abstract: Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work,… read more here.
Keywords: density; performance; near interface; interface traps ... See more keywords
Spontaneous Currents in Superconducting Systems with Strong Spin-Orbit Coupling.
Sign Up to like & getrecommendations! Published in 2017 at "Physical review letters"
DOI: 10.1103/physrevlett.118.077001
Abstract: We show that Rashba spin-orbit coupling at the interface between a superconductor and a ferromagnet should produce a spontaneous current in the atomic thickness region near the interface. This current is counterbalanced by the superconducting… read more here.
Keywords: orbit coupling; spontaneous currents; spin orbit; currents superconducting ... See more keywords
Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Access"
DOI: 10.1109/access.2021.3102614
Abstract: Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of… read more here.
Keywords: near interface; integrated charge; method; mos capacitors ... See more keywords
The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2896216
Abstract: The role of traps in the operation of Schottky barrier diodes is poorly understood. To explore this, SiC Schottky barrier diodes with a high density of near-interface traps were intentionally fabricated. By applying forward current… read more here.
Keywords: sic schottky; near interface; role; barrier height ... See more keywords