Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling
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DOI: 10.1134/s1063782620020153
Abstract: The prospects for the protection of high-voltage 4H-SiC-devices from edge breakdown via the formation of mesa structures with inclined walls (negative beveling) are considered. Numerical simulation of the spatial electric-field distribution in high-voltage (~1500V) reverse-biased… read more here.
Keywords: high voltage; sic devices; negative beveling; edge termination ... See more keywords