5 nm Ultrathin Crystalline Ferroelectric P(VDF‐TrFE)‐Brush Tuned for Hysteresis‐Free Sub 60 mV dec−1 Negative‐Capacitance Transistors
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202300478
Abstract: Negative‐capacitance field‐effect transistors (NC‐FETs) have gathered enormous interest as a way to reduce subthreshold swing (SS) and overcome the issue of power dissipation in modern integrated circuits. For stable NC behavior at low operating voltages,… read more here.
Keywords: brush; vdf trfe; vdf; negative capacitance ... See more keywords
Compensation Charge Control and Modeling for Reproducing Negative Capacitance Effect of Hafnia Ferroelectric Thin Films
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202001356
Abstract: To enable continuing development of the performance of highly integrated semiconductor chips, it is necessary to dramatically lower the power consumption of transistors. The discovery of the negative capacitance (NC) effect and the ferroelectric properties… read more here.
Keywords: thin films; charge; effect; capacitance effect ... See more keywords
The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Energy Materials"
DOI: 10.1002/aenm.202001726
Abstract: Negative capacitance (NC) provides a path to overcome the Boltzmann limit that dictates operating voltages in transistors and, therefore, may open up a path to the challenging proposition of lowering energy consumption and waste heat… read more here.
Keywords: polarization; der waals; van der; negative capacitance ... See more keywords
Design of negative capacitance tunneling field effect transistor with dual-source U-shape channel, super-steep subthreshold swing and large on-state current
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106905
Abstract: Abstract With the rapid development of semiconductor process, both tunneling field effect transistor (TFET) and negative capacitance field effect transistor (NCFET) are regarded as the effective low power devices. In this paper, a novel silicon-based… read more here.
Keywords: field; negative capacitance; effect transistor; tfet ... See more keywords
Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0.5Zr0.5O2 bilayer system
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107914
Abstract: Abstract Recently, negative capacitance (NC) effect in the dielectric/ferroelectric (DE/FE) bilayer system has received significant attention due to its potential in achieving sub- 60 mV/decade subthreshold swing in FETs as well as extremely large capacitance density… read more here.
Keywords: system; negative capacitance; bilayer system; interfacial charge ... See more keywords
Vibration isolation and damping using a piezoelectric flextensional suspension with a negative capacitance shunt
Sign Up to like & getrecommendations! Published in 2020 at "Mechanical Systems and Signal Processing"
DOI: 10.1016/j.ymssp.2020.106696
Abstract: Abstract A suspension combining a piezoelectric component and a mechanical amplifier is studied in view to reducing vibration transmission over a wide frequency band. The principle and design of the piezoelectric suspension are approached using… read more here.
Keywords: suspension; vibration isolation; negative capacitance;
A new design of unsymmetrical shunt circuit with negative capacitance for enhanced vibration control
Sign Up to like & getrecommendations! Published in 2021 at "Mechanical Systems and Signal Processing"
DOI: 10.1016/j.ymssp.2020.107576
Abstract: Abstract Piezoelectric elements are widely used in structural vibration suppression. The applicable bipolar voltage of a piezoelectric element is unsymmetrical, but in most control systems, the voltage on the piezoelectric actuator is applied symmetrically, which… read more here.
Keywords: control; voltage; vibration; negative capacitance ... See more keywords
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Sign Up to like & getrecommendations! Published in 2020 at "Nano Letters"
DOI: 10.1021/acs.nanolett.9b05356
Abstract: Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using… read more here.
Keywords: effect; subthreshold swing; negative capacitance; nanowire tunnel ... See more keywords
Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c19930
Abstract: Negative capacitance (NC) is now an attractive research topic owing to its potential applications. For better integration, investigation about the phenomenon and mechanism of NC in ferroelectric materials on semiconductor substrates is important. In this… read more here.
Keywords: negative capacitance; semiconductor; ferroelectric semiconductor; direct measurement ... See more keywords
Strain Tuning of Negative Capacitance in Ferroelectric KNbO3 Thin Films.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c01866
Abstract: Ferroelectrics with negative capacitance effects can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of Boltzmann's Tyranny. The reduction of power consumption depends on the capacitance matching between… read more here.
Keywords: capacitance effect; ferroelectric knbo3; negative capacitance; capacitance ... See more keywords
β-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
Sign Up to like & getrecommendations! Published in 2017 at "ACS Omega"
DOI: 10.1021/acsomega.7b01289
Abstract: Steep-slope β-Ga2O3 nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and… read more here.
Keywords: slope; ga2o3 nanomembrane; negative capacitance; nanomembrane negative ... See more keywords