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Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b06098
Abstract: Al2O3 on Si is known to form an ultrathin interfacial SiO2 during deposition and subsequent annealing, which creates a negative fixed charge ( Qfix) that enables field-effect passivation and low surface recombination velocities in Si…
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Keywords:
negative fixed;
structural properties;
sio2;
fixed charge ... See more keywords
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1
Published in 2018 at "Applied Physics Express"
DOI: 10.7567/apex.11.061501
Abstract: We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced…
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Keywords:
negative fixed;
atoms al2o3;
gate leakage;
fixed charge ... See more keywords