Finite-temperature full random-phase approximation of bandgap narrowing in quasi-neutral regions: Theory including nonparabolicity and application to silicon and InGaAs
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DOI: 10.1063/5.0051055
Abstract: The bandgap narrowing (BGN) in quasi-neutral regions of semiconductors is calculated in a finite-temperature full random-phase approximation formalism based on a simple isotropic dispersion model including band nonparabolicity. The total quasi-particle shift (QPS) is determined… read more here.
Keywords: bandgap narrowing; finite temperature; temperature; neutral regions ... See more keywords