Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning
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DOI: 10.1063/5.0026348
Abstract: A diamond (111) substrate cleaned with an NH3/H2O2 mixture could form low-temperature direct bonding under atmospheric conditions. When the diamond surface was bonded with a plasma activated SiO2 surface at 200 °C, the bonding strength was… read more here.
Keywords: bonding diamond; heterogeneous direct; direct bonding; nh3 h2o2 ... See more keywords