Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes
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DOI: 10.1016/j.mssp.2020.105628
Abstract: Abstract In this study, p-NiO deposited by magnetron reactive sputtering was adopted to fabricate NiO/GaN heterojunction and edge termination structure for vertical GaN Schottky barrier diodes. The contact properties of the NiO/GaN heterojunction were evaluated… read more here.
Keywords: nio; diode; nio deposited; deposited magnetron ... See more keywords