Superior High Temperature Performance of 8 kV NiO/Ga2O3 Vertical Heterojunction Rectifiers
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Materials Chemistry C"
DOI: 10.1039/d3tc01200j
Abstract: NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages (VB) of >8 kV to 600K. For 100 µm diameter devices, the power figure of merit (VB)2/ RON, where RON is the on-state... read more here.
Keywords: superior high; temperature performance; nio ga2o3; high temperature ... See more keywords
A novel high performance photodetection based on axial NiO/β-Ga2O3 p-n junction heterostructure nanowires array
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac5b54
Abstract: Axial NiO/β-Ga2O3 heterostructure (HS) nanowires (NWs) array was fabricated on Si substrate by catalytic free and controlled growth process called glancing angle deposition technique. The field emission scanning electron microscope image shows the formation of… read more here.
Keywords: axial nio; nio ga2o3; heterostructure nanowires; ga2o3 ... See more keywords
Selective Wet and Dry Etching of NiO over β-Ga2O3
Sign Up to like & getrecommendations! Published in 2022 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2162-8777/ac94a0
Abstract: Patterning of NiO/Ga2O3 heterojunctions requires development of selective wet and dry etch processes. Solutions of 1:4 HNO3:H2O exhibited measurable etch rates for NiO above 40°C and activation energy for wet etching of 172.9 kJ.mol-1 (41.3… read more here.
Keywords: selective wet; wet dry; dry etching; etching nio ... See more keywords
Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation
Sign Up to like & getrecommendations! Published in 2021 at "Crystals"
DOI: 10.3390/cryst11101186
Abstract: In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS)… read more here.
Keywords: study optimization; nio ga2o3; comprehensive study; diode ... See more keywords
Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV
Sign Up to like & getrecommendations! Published in 2023 at "Crystals"
DOI: 10.3390/cryst13060886
Abstract: Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001)… read more here.
Keywords: vertical rectifiers; nio ga2o3; reproducible nio; ga2o3 vertical ... See more keywords