Superior High Temperature Performance of 8 kV NiO/Ga2O3 Vertical Heterojunction Rectifiers
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Materials Chemistry C"
DOI: 10.1039/d3tc01200j
Abstract: NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages (VB) of >8 kV to 600K. For 100 µm diameter devices, the power figure of merit (VB)2/ RON, where RON is the on-state... read more here.
Keywords: superior high; temperature performance; nio ga2o3; high temperature ... See more keywords
Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Applied Physics"
DOI: 10.1063/5.0203526
Abstract: We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse… read more here.
Keywords: schottky diodes; nio ga2o3; trap states; ga2o3 heterojunctions ... See more keywords
On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0204051
Abstract: Degradation and trap evolution in NiO/β-Ga2O3 heterojunction pn diodes under on-state electrical stress were investigated in this work using deep-level transient spectroscopy measurements and density functional theory (DFT) calculations. The decrease in turn-on voltage and… read more here.
Keywords: nio ga2o3; degradation; stress; heterojunction diodes ... See more keywords
Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers
Sign Up to like & getrecommendations! Published in 2024 at "AIP Advances"
DOI: 10.1063/5.0233627
Abstract: Vertical geometry NiO/Ga2O3 heterojunction (HJ) rectifiers and Ni/Au Schottky rectifiers fabricated on the same wafer and each with the same diameter (100 μm) were operated at 77–473 K to compare their capabilities in space-like environments. The HJ… read more here.
Keywords: temperature; nio ga2o3; schottky rectifiers; schottky ... See more keywords
Reliability of NiO/β-Ga2O3 bipolar heterojunction
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0243015
Abstract: Ultra-wide bandgap (UWBG) NiO/β-Ga2O3 p–n junction has recently emerged as a key building block for emerging electronic and optoelectronic devices. However, the long-term reliability of this bipolar junction remains elusive. Here, the temporal evolution of… read more here.
Keywords: nio ga2o3; ga2o3; shift; junction ... See more keywords
Zero-bias photo-induced charge separation using built-in electric field at p-NiO/n-Ga2O3 heterojunction interface
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0297247
Abstract: As a viable alternative to the challenging fabrication of robust β-Ga2O3 p–n homojunctions, this study investigates the variable-temperature photocurrent of p-NiO/n-Ga2O3 heterojunction photodiodes under zero-bias conditions. The device's built-in electric field is utilized to achieve… read more here.
Keywords: field; nio ga2o3; electric field; zero bias ... See more keywords
A novel high performance photodetection based on axial NiO/β-Ga2O3 p-n junction heterostructure nanowires array
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac5b54
Abstract: Axial NiO/β-Ga2O3 heterostructure (HS) nanowires (NWs) array was fabricated on Si substrate by catalytic free and controlled growth process called glancing angle deposition technique. The field emission scanning electron microscope image shows the formation of… read more here.
Keywords: axial nio; nio ga2o3; heterostructure nanowires; ga2o3 ... See more keywords
Selective Wet and Dry Etching of NiO over β-Ga2O3
Sign Up to like & getrecommendations! Published in 2022 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2162-8777/ac94a0
Abstract: Patterning of NiO/Ga2O3 heterojunctions requires development of selective wet and dry etch processes. Solutions of 1:4 HNO3:H2O exhibited measurable etch rates for NiO above 40°C and activation energy for wet etching of 172.9 kJ.mol-1 (41.3… read more here.
Keywords: selective wet; wet dry; dry etching; etching nio ... See more keywords
Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation
Sign Up to like & getrecommendations! Published in 2021 at "Crystals"
DOI: 10.3390/cryst11101186
Abstract: In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS)… read more here.
Keywords: study optimization; nio ga2o3; comprehensive study; diode ... See more keywords
Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV
Sign Up to like & getrecommendations! Published in 2023 at "Crystals"
DOI: 10.3390/cryst13060886
Abstract: Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001)… read more here.
Keywords: vertical rectifiers; nio ga2o3; reproducible nio; ga2o3 vertical ... See more keywords
Simulation Study on Electrical Characteristics of NiO/β-Ga2O3 Heterojunction Enhancement Mode HJ-FinFET
Sign Up to like & getrecommendations! Published in 2025 at "Crystals"
DOI: 10.3390/cryst15090771
Abstract: In this paper, a novel enhancement-mode β-Ga2O3-based FinFET structure with a gate formed by the NiO/β-Ga2O3 heterojunction named HJ-FinFET has been proposed, and the excellent performance of the device has also been demonstrated. The primary… read more here.
Keywords: nio ga2o3; heterojunction; finfet; enhancement mode ... See more keywords