Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure
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DOI: 10.1016/j.spmi.2021.106820
Abstract: Abstract In this study, the effect of p-NiO guard ring length on the properties of vertical GaN Schottky barrier diode was investigated extensively. The forward biased current-voltage characteristics of all diodes with different guard ring… read more here.
Keywords: gan schottky; nio guard; guard ring; schottky barrier ... See more keywords