Dominant near infrared light-emitting diodes based on p-NiO/n-InN heterostructure on SiC substrate
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DOI: 10.1016/j.jallcom.2017.11.298
Abstract: Abstract Near infrared electroluminescence was demonstrated from a p-NiO/n-InN/n-SiC heterojunction light-emitting diode by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering. The device exhibited typical rectification characteristic with a turn-on… read more here.
Keywords: dominant near; near infrared; nio inn; light emitting ... See more keywords