Structural and Sensing Characteristics of NiOx Sensing Films for Extended-Gate Field-Effect Transistor pH Sensors
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DOI: 10.1109/jsen.2020.3027060
Abstract: In this article, the impact of post-deposition annealing (PDA) on the structural features and sensing properties of the NiOx sensing films deposited on a n+-type Si substrate was studied for an extended-gate field-effect transistor (EGFET)… read more here.
Keywords: field effect; sensing films; extended gate; niox sensing ... See more keywords