Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate
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DOI: 10.1016/j.matlet.2020.128395
Abstract: Abstract The influence of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate is systematically investigated. The atomic force microscope images show that the samples possess a smooth surface (the root… read more here.
Keywords: nitridation time; quality; algan gan; gan heterojunction ... See more keywords