Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111).
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c23381
Abstract: Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced semiconductor materials, is essential and critical for a broad range of applications in electronics, optoelectronics, quantum photonics, and renewable energy. To date, however,… read more here.
Keywords: iii nitride; lattice polarity; interfacial modulated; nitride heterostructures ... See more keywords
Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c22798
Abstract: Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth elements, e.g., scandium, has presented a pivotal step toward next-generation electronic, acoustic, photonic, and quantum devices and systems. To date, however, the conventional growth of… read more here.
Keywords: ferroelectric nitride; molybdenum; nitride semiconductors; cmos compatible ... See more keywords
Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5126195
Abstract: We present an analytical model describing misfit stresses relaxation in semipolar III-nitride heterostructures caused by misfit dislocations (MDs) originating from basal or prismatic slip and by sessile MDs. We analyze the critical thickness hc for… read more here.
Keywords: iii nitride; mds; relaxation semipolar; nitride heterostructures ... See more keywords