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Published in 2019 at "Advanced materials"
DOI: 10.1002/adma.201904354
Abstract: In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III-nitride semiconductors. In terms of photonics applications in the visible-UV spectral range, III-nitrides are one of the…
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Keywords:
iii nitride;
blind avalanche;
avalanche;
nitride semiconductors ... See more keywords
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Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c22798
Abstract: Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth elements, e.g., scandium, has presented a pivotal step toward next-generation electronic, acoustic, photonic, and quantum devices and systems. To date, however, the conventional growth of…
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Keywords:
ferroelectric nitride;
molybdenum;
nitride semiconductors;
cmos compatible ... See more keywords
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Published in 2024 at "Materials Horizons"
DOI: 10.1039/d4mh01525h
Abstract: Semiconducting ternary nitrides are a promising class of materials that have received increasing attention in recent years, but often show high free electron concentrations due to the low defect formation energies of nitrogen vacancies and…
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Keywords:
amorphous nitride;
electronic properties;
thin films;
highly tunable ... See more keywords
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Published in 2025 at "CrystEngComm"
DOI: 10.1039/d5ce00542f
Abstract: The growth of high-quality epitaxial thin films of nitride semiconductors is esse1ntial for the development of energy-efficient power electronic devices as well as advanced optoelectronic applications. To enhance the performance...
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Keywords:
advances atomistic;
epitaxial growth;
modeling epitaxial;
growth ... See more keywords