Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
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DOI: 10.1002/adfm.202300428
Abstract: The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a… read more here.
Keywords: boron nitride; nitride threshold; microscopy; resistive switching ... See more keywords