Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminum
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.0c01724
Abstract: Aluminum nitride (AlN) is a semiconductor with a wide range of applications from light-emitting diodes to high-frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemi... read more here.
Keywords: aluminum nitride; time resolved; nitride time; reduction carbon ... See more keywords