Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
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DOI: 10.1021/acsomega.2c04626
Abstract: Herein, the defect-related properties of an AlN sample prepared based on the optimal process parameters by metal nitride vapor phase epitaxy (MNVPE) were investigated. The FWHM values of the (0002)/(101̅2) planes of the sample by… read more here.
Keywords: nitride vapor; phase epitaxy; impact defects; vapor phase ... See more keywords