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Published in 2020 at "Materials"
DOI: 10.3390/ma13194428
Abstract: III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10…
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Keywords:
photodetector;
iii nitrides;
nitrides resonant;
resonant cavity ... See more keywords