Impact of Nitrogen Annealing Concentration on p-Type FinFET Reliability Caused by Edge Effect
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DOI: 10.1109/ted.2025.3606460
Abstract: This study investigates abnormal degradation behavior in long-channel p-type fin-shaped field-effect transistors (FinFETs) with nitrogen annealing, evaluated through negative bias stress (NBS). A correlation between gate leakage and channel length was observed, showing a similar… read more here.
Keywords: annealing concentration; edge effect; effect; nitrogen annealing ... See more keywords