Mechanism for the formation of nitrogen-filled voids after annealing of GaN on a sapphire substrate
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DOI: 10.1063/1.5039755
Abstract: This study investigated the formation of nitrogen-filled voids at the interface between a GaN layer grown on a sapphire substrate by metalorganic vapor phase epitaxy. These voids were formed in the sapphire substrate at the… read more here.
Keywords: sapphire substrate; filled voids; nitrogen filled; sapphire ... See more keywords