Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08392-4
Abstract: The effects of nitrogen incorporation by high-dose ion implantation in epitaxial gadolinium oxide (Gd2O3) films on Si (111) followed by annealing have been investigated. The nitrogen content in the oxide layer was changed by altering… read more here.
Keywords: nitrogen incorporation; layer; gd2o3; ion ... See more keywords
A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy
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DOI: 10.1038/srep43069
Abstract: Nitrogen doping of 4H-SiC during vapor phase epitaxy is still lacking of a general model explaining the apparently contradictory trends obtained by different teams. In this paper, the evolutions of nitrogen incorporation (on both polar… read more here.
Keywords: nitrogen incorporation; new model; model situ; surface ... See more keywords