Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
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DOI: 10.1016/j.microrel.2020.113746
Abstract: Abstract In nMOS transistors the impact of positive bias temperature instability (PBTI) on the device performance is typically considered negligible and has thus been barely studied in the past. However, an accurate description of this… read more here.
Keywords: sion nmos; hole traps; electron hole; sion ... See more keywords