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Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617020257
Abstract: The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism…
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Keywords:
non effects;
switch current;
gate switch;
impact non ... See more keywords