Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS.
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DOI: 10.1002/smll.202202590
Abstract: Atomically thin, 2D, and semiconducting transition metal dichalcogenides (TMDs) are seen as potential candidates for complementary metal oxide semiconductor (CMOS) technology in future nodes. While high-performance field effect transistors (FETs), logic gates, and integrated circuits… read more here.
Keywords: integration; non von; von neumann; heterogeneous integration ... See more keywords