Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad
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DOI: 10.3390/cryst13060869
Abstract: 4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods. To overcome the material removal bottleneck imposed by aqueous chemistry, a… read more here.
Keywords: sic wafers; material removal; nonaqueous slurry; polishing sic ... See more keywords