Analysis and Modeling of the Temperature-Dependent Nonlinearity of Intrinsic Capacitances in AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2021.3057444
Abstract: Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction results indicate that the current modeling methods cannot accurately reflect the variations of nonlinearity… read more here.
Keywords: modeling temperature; nonlinearity intrinsic; intrinsic capacitances; temperature dependent ... See more keywords