Electrical nonlinearity in silicon modulators based on reversed PN junctions
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DOI: 10.1364/prj.5.000124
Abstract: The electrical nonlinearity of silicon modulators based on reversed PN junctions was found to severely limit the linearity of the modulators. This effect, however, was inadvertently neglected in previous studies. Considering the electrical nonlinearity in… read more here.
Keywords: modulators based; nonlinearity; electrical nonlinearity; nonlinearity silicon ... See more keywords