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Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.11.020
Abstract: Abstract The nonpolar a-plane p-AlxGa1-xN/GaN superlattices (SLs) were successfully grown with metal organic chemical vapor deposition technology. The surface morphology, carrier concentration, layer thickness, and Al composition for the nonpolar a-plane p-AlxGa1-xN/GaN SLs were characterized…
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Keywords:
plane;
nonpolar plane;
alxga1 gan;
gan superlattices ... See more keywords
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Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.05.012
Abstract: Abstract The nonpolar a-plane Mg-delta-doped Al0.6Ga0.4N/GaN superlattices (SLs) with enhanced hole concentration were successfully grown by using indium (In)-surfactant with metal organic chemical vapor deposition (MOCVD) technology. The effect of In-surfactant on the characteristics of…
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Keywords:
microscopy;
nonpolar plane;
gan superlattices;
concentration ... See more keywords
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Published in 2018 at "ACS Photonics"
DOI: 10.1021/acsphotonics.8b00283
Abstract: An internal quantum efficiency (IQE) as high as 39% was achieved with the nonpolar a-plane AlGaN-based multiple quantum wells (MQWs) grown on the r-plane sapphire substrate with metal organic chemical vapor deposition technology. Evident fourth…
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Keywords:
quantum;
algan based;
internal quantum;
plane algan ... See more keywords
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Published in 2017 at "Optical Materials Express"
DOI: 10.1364/ome.7.003944
Abstract: Nonpolar a-plane ZnO layers with anisotropic in-plane strains were prepared on the three substrates of r-sapphire, a-GaN, and a-Al0.08GaN templates via a pulsed laser deposition system, to investigate the distinguishing anisotropic photoluminescence properties of a-ZnO…
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Keywords:
zno;
plane zno;
nonpolar plane;
photoluminescence ... See more keywords