Impact of nonuniform gate oxide shape on TFET performance: A reliability issue
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DOI: 10.1016/j.physe.2018.07.001
Abstract: Abstract Gate dielectric scaling is a vital key to improve the steep switching characteristics of TFETs. However, scaling down the oxide thickness causes high gate leakage current that cannot be neglected. The impact of the… read more here.
Keywords: nonuniform gate; shape; performance; gate ... See more keywords