Design of high performance MoS 2 -based non-volatile memory via ion beam defect engineering
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DOI: 10.1088/2053-1583/ab115c
Abstract: Nonvolatile charge trap memory is an important part of the continuous development of information technology. As a 2-dimensional (2D) material with fantastic physical characteristics, molybdenum disulfide (MoS2) has been receiving extensive attention for its potential… read more here.
Keywords: trap gate; performance; memory; charge trap ... See more keywords