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Published in 2024 at "ACS nano"
DOI: 10.1021/acsnano.3c10068
Abstract: Recently, we demonstrated the nonvolatile resistive switching effects of metal-insulator-metal (MIM) atomristor structures based on two-dimensional (2D) monolayers. However, there are many remaining combinations between 2D monolayers and metal electrodes; hence, there is a need…
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Keywords:
nonvolatile resistive;
switching coexistence;
volatile nonvolatile;
resistive switching ... See more keywords
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Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0061792
Abstract: Scientists have been seeking for suitable materials with nonvolatile resistive switching (RS) performance for memristive applications. Recently, nonvolatile RS behaviors have been achieved in an increasing number of two-dimensional (2D) materials. However, 2D InSe layers…
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Keywords:
oxidation;
nonvolatile resistive;
nanosheets controllable;
inse nanosheets ... See more keywords
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Published in 2018 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/aaf4c7
Abstract: Flexible nonvolatile resistive switching memory is a promising candidate for next generation storage technologies. Exploring new materials is of crucial importance to achieve further performances of flexible nonvolatile resistive switching memory. In this work, topological…
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Keywords:
bi2te3 nanosheets;
resistive switching;
nonvolatile resistive;
flexible nonvolatile ... See more keywords
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Published in 2025 at "Chinese Physics B"
DOI: 10.1088/1674-1056/adee88
Abstract: A facile one-step hydrothermal method has been reported to synthesize the α-Fe2O3 nanosheet arrays with the preferred orientation along the [104] direction on the ITO substrate. The α-Fe2O3 nanosheet arrays-based W/α-Fe2O3/ITO memristor has been achieved…
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Keywords:
nonvolatile resistive;
fe2o3 ito;
nanosheet arrays;
ito memristor ... See more keywords
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Published in 2020 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/41/1/012101
Abstract: For nanostructure SnO2, it is very difficult for its electric properties to accurately control due to the presence of abundant surface states. The introduction of Sm can improve the traps in surface space charge region…
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Keywords:
surface;
nonvolatile resistive;
effect;
switching memory ... See more keywords