Normally-off AlGaN/GaN heterostructure junction field-effect transistors with blocking layers
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.05.063
Abstract: Abstract In this study, normally-off AlGaN/GaN heterostructure junction field-effect transistors (HJFETs) with p-GaN cap layer were reported, in which intrinsic GaN were proposed as blocking layers between the p-GaN cap layer and the AlGaN layer… read more here.
Keywords: layer; heterostructure junction; algan gan; normally algan ... See more keywords
High-reliability normally off AlGaN/GaN HEMTs with a 720 V breakdown voltage via a TCAD-optimized GaN cap layer
Sign Up to like & getrecommendations! Published in 2025 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ae0758
Abstract: This work presents a detailed Technology Computer Aided Design (TCAD) and Transport of Ions in Matter (TRIM)-based simulation study of normally off AlGaN/GaN high-electron-mobility transistors (HEMTs), focusing on the influence of the thickness of the… read more here.
Keywords: gan cap; cap layer; voltage; normally algan ... See more keywords
A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation
Sign Up to like & getrecommendations! Published in 2021 at "Membranes"
DOI: 10.3390/membranes11110899
Abstract: This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor… read more here.
Keywords: technique; ion implantation; algan gan; normally algan ... See more keywords