High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design
Sign Up to like & getrecommendations! Published in 2021 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-021-02786-2
Abstract: This paper proposes a novel normally-off p-GaN gate InAlN/GaN HEMT to replace p-GaN gate AlGaN/GaN HEMT for improving the device stability, enhancing saturation current, reducing the on-state resistance, improving the cut off frequency and decreasing… read more here.
Keywords: gan gate; inaln; electron; layer ... See more keywords
Nanofabrication of normally-off GaN vertical nanowire MESFETs.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab13d0
Abstract: Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a… read more here.
Keywords: normally gan; nanofabrication normally; gan vertical; nanowire ... See more keywords