Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
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DOI: 10.1088/2053-1591/adb08f
Abstract: The objective of this study is to optimize the trade-off between threshold voltage (VTH) and maximum drain current (ID,max) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching… read more here.
Keywords: algan barrier; normally recessed; algan gan; gate algan ... See more keywords