CSME: A novel cycle-sensing margin enhancement scheme for high yield STT-MRAM
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DOI: 10.1016/j.microrel.2020.113732
Abstract: Abstract Spin-transfer torque (STT)-magnetic random access memory (MRAM) requires yield-aware design for hybrid magnetic-CMOS integration. In this paper, a novel cycle-sensing margin enhancement (CSME) scheme with pMOS assisted voltage-type sense amplifier (p-VSA) is proposed to… read more here.
Keywords: cycle sensing; sensing margin; novel cycle; margin enhancement ... See more keywords