Novel driver circuit for switching performance improvements in SiC MOSFETs
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DOI: 10.1007/s43236-020-00132-5
Abstract: Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) are expected to be an attractive replacement for Si MOSFETs in high power applications due to their high blocking voltage, high switching speed, and low switching losses. However,… read more here.
Keywords: voltage; voltage current; sic mosfet; oscillation ... See more keywords