An all 2D Fe-FET retinomorphic sensor based on novel gate dielectric In2Se3-xOx
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d3nr01567j
Abstract: Two-dimension (2D) ferroelectric field effect transistors (Fe-FETs) have attracted extensive interest as a competitive platform for implementing future-generation functional electronics, including digital memory and brain-inspired computing circuits. In 2D Fe-FETs,... read more here.
Keywords: retinomorphic sensor; gate dielectric; sensor based; novel gate ... See more keywords
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2025.3584809
Abstract: In this study, AlGaN/GaN high-electron-mobility-transistor (HEMTs) with a small gate length were fabricated using a stepper. Additionally, a novel gate fabrication process was conducted to shrink the gate head, thus reducing the parasitic capacitance of… read more here.
Keywords: gate fabrication; inline formula; novel gate; tex math ... See more keywords
A Novel Gate-Buck-Based Drive Circuit for Mitigating the Degradation of SiC MOSFETs During Short Circuit
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2025.3536033
Abstract: Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have a small short-circuit (SC) tolerance, making them prone to degradation and even damage. The major factors that influence SiC MOSFET degradation are studied in… read more here.
Keywords: circuit; degradation; novel gate; drive circuit ... See more keywords