A Novel IGBT With High- ${k}$ Dielectric Modulation Achieving Ultralow Turn-Off Loss
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DOI: 10.1109/ted.2020.2964879
Abstract: A novel insulated gate bipolar transistor modulated by a high- ${k}$ dielectric (HK-IGBT) is presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer a quick and complete depletion to the drift region during… read more here.
Keywords: igbt; novel igbt; turn loss; high dielectric ... See more keywords