Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application
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DOI: 10.1109/ted.2016.2637365
Abstract: In this paper, we present a distinguished hysteresis behavior by a few nanometers inlaid Zr–Hf–O (ZHO) layer between the Ba0.6Sr0.4TiO3(BST) film and the metal Pt electrode. The capacitance–voltage curve shows an insignificant change in the… read more here.
Keywords: nonvolatile memory; novel nonvolatile; 6sr0 4tio3; layer ... See more keywords