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Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1168-y
Abstract: A novel SOI LDMOS with p+ buried islands and p-top layer in the drift region (PBI SOI) is proposed in this letter. At off-state, the high potential is induced from the drain region to the…
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Keywords:
soi ldmos;
buried islands;
novel soi;
drift region ... See more keywords