Fabrication and Properties of nSi–pCdTe Heterojunctions
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DOI: 10.1134/s002016852001015x
Abstract: nSi–pCdTe heterostructures have been produced by growing a pCdTe layer on an nSi substrate using thermal evaporation in vacuum at a residual pressure of 10–3 Pa. We have studied the elemental concentration depth profiles across… read more here.
Keywords: nsi pcdte; properties nsi; fabrication properties; pcdte heterojunctions ... See more keywords