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Published in 2019 at "Doklady Chemistry"
DOI: 10.1134/s0012500819070012
Abstract: Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.
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Keywords:
nucleation electrochemical;
electrochemical etching;
pore nucleation;
chemistry ... See more keywords