Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs)
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DOI: 10.1088/1361-6463/acd127
Abstract: The formation of recombination-induced bar shaped stacking faults (BSSFs) during forward voltage operation of SiC devices, can lead to increased voltage drop and enhanced device degradation. In this study, a triangular epitaxial defect is identified… read more here.
Keywords: nucleation source; faults bssfs; source; stacking faults ... See more keywords