The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers
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DOI: 10.1038/s41598-020-74030-y
Abstract: III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in… read more here.
Keywords: iii nitride; nucleation threading; partial dislocations; nucleation ... See more keywords